Ion beam lithography

Ion beam lithography is the practice of scanning a focused beam of ions in a patterned fashion across a surface in order to create very small structures such as integrated circuits or other nanostructures.[1]

Ion beam lithography has been found to be useful for transferring high-fidelity patterns on three-dimensional surfaces.[2]

Ion beam lithography offers higher resolution patterning than UV, X-ray, or electron beam lithography because the ions have a smaller wavelength than the UV light, X-rays, and e-beam and undergo almost no diffraction or scattering. There is also a reduced potential radiation effect to sensitive underlying structures compared to x-ray and e-beam lithography.[3]

See also

References

  1. ^ F. Watt∗, A. A. Bettiol, J. A. Van Kan, E. J. Teo and M. B. H. Breese http://www.ciba.nus.edu.sg/publications/files/pbw/pbw2005_1.pdf "Ion Beam Lithography and Nanofabrication: a Review"], The Guardian, London, 17 December 2004. Retrieved on 2011-03-03.
  2. ^ Dhara Parikh, Barry Craver, Hatem N. Nounu, Fu-On Fong, and John C. Wolfe, "Nanoscale Pattern Definition on Nonplanar Surfaces Using Ion Beam Proximity Lithography and Conformal Plasma-Deposited Resist", Journal of microelectromechanical systems, vol. 17, no. 3, June 2008
  3. ^ Madou, Mark (2012). Fundamentals of Microfabrication and Nanotechnology volume 2. Boca Raton, Fl: CRC Press. pp. 655. ISBN 978-1-4200-5519-1.